Title :
Electron transport through nanocomposite SiO2(Si) films containing Si nanocrystals
Author :
Evtukh, A. ; Bratus, O. ; Steblova, O. ; Prokopchuk, V.
Author_Institution :
V. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine
Abstract :
The current transport through insulating SiO2 films with silicon nanocrystals in Si/SiO2(Si)/Al structures has been investigated in the wide range of temperatures (82-350 K). The nanocomposite SiO2(Si) films containing the silicon nanoclusters embedded into insulating SiO2 matrix have been obtained by ion-plasma sputtering of silicon target and subsequent high-temperature annealing. Based on the detailed analysis of current-voltage characteristics the calculation of some electrical parameters has been performed and the mechanism of electron conductivity of nanocomposite SiO2(Si) films has been determined. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level.
Keywords :
Fermi level; MIS structures; aluminium; annealing; electron traps; elemental semiconductors; high-temperature effects; hopping conduction; insulating thin films; nanocomposites; nanofabrication; plasma materials processing; silicon; silicon compounds; sputter deposition; Fermi level; Si-SiO2-Al; current transport; current-voltage characteristics; electrical conductivity; electrical parameters; electron transport; high-temperature annealing; insulating films; ion-plasma sputtering; nanocomposite films; silicon nanoclusters; silicon nanocrystals; temperature 82 K to 350 K; variable-range hopping conductivity; Conductivity; Films; Nanocrystals; Silicon; Temperature; Temperature dependence; Temperature measurement; current-voltage characteristic; electron transport; silicon nanoclusters; traps; variable- range hopping;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on
Conference_Location :
Kiev
DOI :
10.1109/ELNANO.2015.7146844
