• DocumentCode
    718434
  • Title

    DC and noise characteristics of underlap Ultra-Thin BOX SOI nMOSFETs

  • Author

    Kudina, V. ; Garbar, N. ; Simoen, E. ; Claeys, C.

  • Author_Institution
    V.E. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine
  • fYear
    2015
  • fDate
    21-24 April 2015
  • Firstpage
    119
  • Lastpage
    123
  • Abstract
    The evolution of the 1/f noise and the resistance of extensionless Ultra-Thin BOX SOI nMOSFETs with decreasing gate length in comparison with standard ones is analyzed. It is revealed that the non-overlapped under-spacer regions define the resistance and 1/f noise behavior of extensionless devices.
  • Keywords
    1/f noise; MOSFET; silicon-on-insulator; 1/f noise; silicon-on-insulator; ultra-thin BOX SOI nMOSFET; 1f noise; Logic gates; MOSFET; Resistance; Silicon; Standards; 1/f noise; Ultra-thin BOX MOSFET; extension architecture;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on
  • Conference_Location
    Kiev
  • Type

    conf

  • DOI
    10.1109/ELNANO.2015.7146849
  • Filename
    7146849
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=718434