Title :
Occupation of the valleys in multivalley semiconductors
Author :
Bayda, Irina ; Moskaliuk, Vladimir
Author_Institution :
Phys. & Biomed. Electron. Dept., Nat. Tech. Univ. of Ukraine, Kiev, Ukraine
Abstract :
Using the concentration balance equations for each of the main valleys in multivalley semiconductors the relations for valley occupation calculation in high electric field are obtained. In particular, a three-valley model for the conduction band is employed. Analysis of the effect of intervalley momentum relaxation times on valley occupation for both semiconductors GaAs and AlAs was performed basing on the equations mentioned above.
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; many-valley semiconductors; momentum; AlAs; GaAs; concentration balance equations; conduction band; electric field; intervalley momentum relaxation; multivalley semiconductors; three-valley model; valley occupation calculation; Conferences; Effective mass; Electric fields; Gallium arsenide; Mathematical model; Scattering; aluminum arsenide; concentration relaxation times; gallium arsenide; momentum relaxation times; multivalley semiconductors; occupation of the valleys;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on
Conference_Location :
Kiev
DOI :
10.1109/ELNANO.2015.7146865
