Preparation and some properties of pure and doped barium titanate thin films

Author

Korobova, N. ; Timoshenkov, S. ; Artemov, E. ; Kosolapova, G. ; Petrova, V.

Author_Institution

Microelectron. Dept., Nat. Res. Univ. of Electron. Technol. (MIET), Moscow, Russia

fYear

2015

fDate

21-24 April 2015

Firstpage

204

Lastpage

206

Abstract

The article describes the research and development results of thin pure and doped barium titanate films with control orientation deposited on Pt substrates by electrophoretic deposition and sol-gel technique. Film temperature dependences of the electrical properties were investigated. Results showed that pure films had semiconductive behavior after heat-treatment in vacuum at 700-1000 °C. It was found that resistance to the degradation of dielectric properties can be improved by small doping (0.1-0.5 mole%) of La₂O₃.

Keywords

barium compounds; electrical resistivity; electrodeposition; electrophoresis; heat treatment; lanthanum compounds; permittivity; semiconductor doping; semiconductor growth; semiconductor materials; semiconductor thin films; sol-gel processing; BaTiO₃:La₂O₃; Pt; Pt substrates; barium titanate thin films; ceramics; degradation; dielectric properties; doping; electrical properties; electrical resistance; electrophoretic deposition; heat-treatment; semiconductive behavior; sol-gel method; temperature 700 degC to 1000 degC; Barium; Capacitors; Films; Temperature; Temperature measurement; Titanium compounds; barium titanate; doping; thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on

Conference_Location

Kiev

Type

conf

DOI

10.1109/ELNANO.2015.7146872

Filename

7146872