Title :
Preparation and some properties of pure and doped barium titanate thin films
Author :
Korobova, N. ; Timoshenkov, S. ; Artemov, E. ; Kosolapova, G. ; Petrova, V.
Author_Institution :
Microelectron. Dept., Nat. Res. Univ. of Electron. Technol. (MIET), Moscow, Russia
Abstract :
The article describes the research and development results of thin pure and doped barium titanate films with control orientation deposited on Pt substrates by electrophoretic deposition and sol-gel technique. Film temperature dependences of the electrical properties were investigated. Results showed that pure films had semiconductive behavior after heat-treatment in vacuum at 700-1000 °C. It was found that resistance to the degradation of dielectric properties can be improved by small doping (0.1-0.5 mole%) of La2O3.
Keywords :
barium compounds; electrical resistivity; electrodeposition; electrophoresis; heat treatment; lanthanum compounds; permittivity; semiconductor doping; semiconductor growth; semiconductor materials; semiconductor thin films; sol-gel processing; BaTiO3:La2O3; Pt; Pt substrates; barium titanate thin films; ceramics; degradation; dielectric properties; doping; electrical properties; electrical resistance; electrophoretic deposition; heat-treatment; semiconductive behavior; sol-gel method; temperature 700 degC to 1000 degC; Barium; Capacitors; Films; Temperature; Temperature measurement; Titanium compounds; barium titanate; doping; thin films;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on
Conference_Location :
Kiev
DOI :
10.1109/ELNANO.2015.7146872
