Title :
Elements for photodetectors based on epitaxial layers In4Se3, In4Te3 and Cdsb
Author :
Vorobets, George ; Vorobets, Olexandr ; Khalavka, Yuriy ; Strebezhev, Volodymyr ; Strebezhev, Viktor ; Balazyuk, Vitaliy
Author_Institution :
Dept. of Comput. Syst. & Networks, Yuriy Fedkovych Chernivtsi Nat. Univ., Chernivtsi, Ukraine
Abstract :
Photosensitive elements of semiconductor compounds In4Se3, In4Te3, CdSb and heterostructures were obtained by liquid phase epitaxy method. Laser modification of structural and phase state of epitaxial layers was conducted. The methods of SEM, AFM and STM microscopy were used for investigation of transformation processes in nanostructured regions on boundaries of hetero structures. Spectral characteristics and parameters of photosensitive elements and IR filters were studied. Interference absorptive filters for cutting off infrared range of the spectrum were formed by deposition in a vacuum on these crystals of thin films.
Keywords :
atomic force microscopy; cadmium compounds; indium compounds; interference filters; laser materials processing; liquid phase epitaxial growth; nanostructured materials; photodetectors; scanning electron microscopy; scanning tunnelling microscopy; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor materials; AFM; CdSb; IR filters; In4Se3; In4Te3; SEM; STM microscopy; epitaxial layers; heterostructures; infrared range; interference absorptive filters; laser modification; liquid phase epitaxy method; nanostructured regions; phase state; photodetectors; photosensitive elements; semiconductor compounds; spectral characteristics; structural state; transformation processes; Compounds; Epitaxial growth; Epitaxial layers; Heterojunctions; Interference; Optical fiber filters; CdSb; In4Se3; epitaxial layer; heterostructure; infrared filter; laser modification;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on
Conference_Location :
Kiev
DOI :
10.1109/ELNANO.2015.7146878
