Title :
The Q-band low noise reference oscillator based on bipolar transistor designed for the pulse ESR spectrometer
Author :
Sitnikov, A.A. ; Kalabukhova, E.N. ; Oliynik, V.V. ; Kolisnichenko, M.V.
Author_Institution :
Dept. of Semicond. heterostructures, V.E. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine
Abstract :
The construction of the low noise Q-band reference oscillator based on the voltage controlled bipolar GaAs transistor for the transmitter of pulse microwave (MW) bridge designed for the pulse electron spin resonance (ESR) spectrometer has been presented. The application of the reference MW oscillator, which consists of a quartz crystal oscillator, frequency synthesizer and a low-noise GaAs bipolar transistor, instead of klystron or Gunn oscillator, results in the improvement of the phase and frequency noise of the pulse ESR spectrometer, which makes it well suited for the dating and diagnostics of the biomaterials by pulse ESR methods.
Keywords :
Gunn oscillators; III-V semiconductors; bipolar transistors; frequency synthesizers; gallium arsenide; klystrons; microwave oscillators; spectrometers; GaAs; Gunn oscillator; Q-band low noise reference oscillator; biomaterials; bipolar transistor; frequency synthesizer; klystron; pulse electron spin resonance spectrometer; quartz crystal oscillator; Bridge circuits; Frequency control; Frequency conversion; Frequency synthesizers; Noise; Voltage-controlled oscillators; electron spin echo spectrometer; frequency noise; oscillator on bipolar transistor; pulse mw bridge;
Conference_Titel :
Electronics and Nanotechnology (ELNANO), 2015 IEEE 35th International Conference on
Conference_Location :
Kiev
DOI :
10.1109/ELNANO.2015.7146900
