DocumentCode :
718519
Title :
Stability of characteristics of resistive hydrogen sensors based on thin tin dioxide films with deposited catalysts Pt and Pd
Author :
Gaman, V.I. ; Almaev, A.V. ; Maksimova, N.K.
Author_Institution :
Dept. of Semicond. Electron., Tomsk State Univ., Tomsk, Russia
fYear :
2015
fDate :
21-23 May 2015
Firstpage :
1
Lastpage :
4
Abstract :
This work presents the results of investigation of stability of gas sensitive and electrical characteristics of resistive hydrogen sensors based on thin films of tin dioxide with deposited Pt and Pd dispersed layers. Measurements of the sensor response and energy band bending eφs at the SnO2 microcrystals interfaces at long - term operation of sensors were showed that the significantly variation of these values are observed in first month of the sensor using. Perhaps these phenomena are caused by the surface reconstruction during operation of sensors and consequently the increase of density oxygen ions chemisorbed on the surface of tin dioxide. The stability of the sensors parameters depends heavily on level of absolute humidity. The changes of the energy band bending eφs and the sensor response are caused by process of dissociative chemisorption of water molecules on the semiconductor surface.
Keywords :
band structure; chemisorption; gas sensors; hydrogen; palladium; platinum; surface reconstruction; thin film sensors; tin compounds; H; Pt-Pd-SnO2:Sb; absolute humidity; deposited catalysts; dissociative chemisorption; energy band bending; resistive hydrogen sensors; semiconductor surface; sensor parameter stability; sensor response; surface reconstruction; thin tin dioxide films; tin dioxide microcrystals interfaces; water molecules; Chemical sensors; Humidity; Hydrogen; Sensor phenomena and characterization; Temperature sensors; Tin; energy band banding; humidity; hydrogen; sensor response; stability; tin dioxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Control and Communications (SIBCON), 2015 International Siberian Conference on
Conference_Location :
Omsk
Print_ISBN :
978-1-4799-7102-2
Type :
conf
DOI :
10.1109/SIBCON.2015.7146973
Filename :
7146973
Link To Document :
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