Title :
Program for modeling transient off of power semiconductor devices
Author :
Bespalov, N.N. ; Ilyin, M.V. ; Kapitonov, S.S. ; Lysenkov, A.E.
Author_Institution :
Dept. of Electron. & Nanoelectron., Nat. Res. Ogarev Mordovia State Univ., Saransk, Russia
Abstract :
The article deals with a program for modeling the transient off of power semiconductor devices, which allows to take into account the parameters of a semiconductor structure of power semiconductor devices and circuitry.
Keywords :
power engineering computing; power semiconductor devices; virtual instrumentation; power semiconductor devices; semiconductor structure; transient off modeling; Power semiconductor devices; Semiconductor diodes; Snubbers; Switches; Switching circuits; Transient analysis; Voltage control; LabVIEW; power semiconductor device; the semiconductor structure; transition off;
Conference_Titel :
Control and Communications (SIBCON), 2015 International Siberian Conference on
Conference_Location :
Omsk
Print_ISBN :
978-1-4799-7102-2
DOI :
10.1109/SIBCON.2015.7146998
