Effect of two local phonon modes in wide-band matrix on 1D dissipative tunneling probability rate

One-dimensional dissipative quantum tunneling model has been proposed to interpret the recent experimental data on current-voltage characteristics of tunnel contact between atomic force microscope probe and surface of InAs/GaAs quantum dots. Our conductive atomic force microscope experiment provided measurements of their local density of states. In a quasiclassical, dilute instanton - antiinstanton gas approximation, we obtain exact analytical result for the tunneling probability rate for one charged particle weakly interacting with two promoting phonon modes in the wide-band matrix, which characterizes medium. The agreement between the number, position, and heights of the peaks in the obtained current-voltage characteristics and that given by the theoretical result for the oscillatory case is strikingly better than in our preliminary result with only one local phonon mode taken into account. One of the practical implications of the obtained result is that the current-voltage characteristics of the semiconductor tunnel nanoelectronic devices can thus be controlled to certain extent by modulations of the wide-band matrix parameters.