Title :
Synthesis of nanosized silicon carbide in a free expiring plasma jet
Author :
Nikitin, D. ; Sivkov, A. ; Pak, A. ; Shanenkova, Yu. ; Ivashutenko, A.
Author_Institution :
Inst. of Power Eng., Nat. Res. Tomsk Polytech. Univ., Tomsk, Russia
Abstract :
Silicon carbide (SiC) nanomaterials can be successfully used for ceramics production and semiconductor applications. The possibility of the SiC nanopowder synthesis in an electrodischarge silicon-carbon plasma jet generated by a pulsed coaxial magnetoplasma accelerator (CMPA) is shown in this paper. A plasma jet expired in a free space of a reactor chamber filled with argon. The synthesized product was analyzed without any preparation by some modern techniques such as X-ray diffraction, scanning and transmission electron microscopy. The resulting product was compared with nanopowders synthesized in a plasma flow influencing on a copper barrier.
Keywords :
X-ray diffraction; ceramics; nanofabrication; nanoparticles; plasma flow; plasma jets; scanning electron microscopy; semiconductor growth; silicon compounds; transmission electron microscopy; wide band gap semiconductors; CMPA; SiC; SiC nanopowder synthesis; X-ray diffraction; ceramics production; copper barrier; electrodischarge silicon-carbon plasma jet; free expiring plasma jet; free space; nanopowder synthesis; nanosized silicon carbide synthesis; plasma flow; pulsed coaxial magnetoplasma accelerator; reactor chamber; scanning electron microscopy; semiconductor application; silicon carbide nanomaterials; transmission electron microscopy; Carbon; Diffraction; Plasmas; Powders; Silicon; Silicon carbide; X-ray diffraction; X-ray diffractometry; coaxial magnetoplasma accelerator; plasmodynamic synthesis; silicon carbide; transmission electron microscopy;
Conference_Titel :
Control and Communications (SIBCON), 2015 International Siberian Conference on
Conference_Location :
Omsk
Print_ISBN :
978-1-4799-7102-2
DOI :
10.1109/SIBCON.2015.7147160
