Synthesis of nanosized silicon carbide in a free expiring plasma jet

Silicon carbide (SiC) nanomaterials can be successfully used for ceramics production and semiconductor applications. The possibility of the SiC nanopowder synthesis in an electrodischarge silicon-carbon plasma jet generated by a pulsed coaxial magnetoplasma accelerator (CMPA) is shown in this paper. A plasma jet expired in a free space of a reactor chamber filled with argon. The synthesized product was analyzed without any preparation by some modern techniques such as X-ray diffraction, scanning and transmission electron microscopy. The resulting product was compared with nanopowders synthesized in a plasma flow influencing on a copper barrier.