Title :
Frequency transducer of the pressure on the basis of reactive properties of transistor structure with negative resistance
Author :
Osadchuk, A.V. ; Osadchuk, I.A.
Author_Institution :
Radioeng. Dept., Vinnitsa Nat. Tech. Univ., Vinnitsa, Ukraine
Abstract :
The opportunity of direct transformation of pressure in frequency is shown on the basis of the hybrid integrated circuit consisting of the two-collector tenzosensitive transistor and the field two-gate transistor with an active inductive element on the basis of the bipolar transistor with a phase-shifting RC chain. Analytical dependencies of transformation function and the equation of sensitivity are received. Theoretical and experimental researches have shown, that sensitivity of the transducer makes 1,55-1,10 kHz /kPa.
Keywords :
RC circuits; bipolar transistors; hybrid integrated circuits; negative resistance; pressure transducers; sensitivity analysis; active inductive element; bipolar transistor; direct pressure transformation; field two-gate transistor; frequency transducer; hybrid integrated circuit; negative resistance; phase-shifting RC chain; reactive property; sensitivity equation; transducer sensitivity; transformation function; transistor structure; two-collector tenzosensitive transistor; Bipolar transistors; Inductance; Mathematical model; Resistance; Sensitivity; Transducers; Transistors; frequency; negative resistance; pressure; reactive properties; transducer of the pressure;
Conference_Titel :
Control and Communications (SIBCON), 2015 International Siberian Conference on
Conference_Location :
Omsk
Print_ISBN :
978-1-4799-7102-2
DOI :
10.1109/SIBCON.2015.7147168
