Title :
Effect in GaAs produced by fast neutrons and protons
Author :
Soboleva, E.G. ; Litvinenko, V.V. ; Krit, T.B.
Author_Institution :
Inst. of Technol., Tomsk Polytech. Univ., Yurga, Russia
Abstract :
It has been found that of P-type defects to total defect formation is larger in GaAs samples irradiated with high-energy (65 MeV) protons or fast neutrons. The E4 and E5 defects are annealed out after heat treatment of such samples at a temperature near 200°C; as a result, the shape and intensity of the U band change somewhat.
Keywords :
III-V semiconductors; annealing; defect states; gallium arsenide; neutron effects; proton effects; GaAs; annealing; defect formation; electron volt energy 65 MeV; fast neutron irradiation; heat treatment; high-energy proton irradiation; p-type defects; Annealing; Electron traps; Filling; Gallium arsenide; Neutrons; Protons; Shape; DLTS spectr; GaAs; Schottky barrier; neutron; proton;
Conference_Titel :
Control and Communications (SIBCON), 2015 International Siberian Conference on
Conference_Location :
Omsk
Print_ISBN :
978-1-4799-7102-2
DOI :
10.1109/SIBCON.2015.7147220
