• DocumentCode
    718778
  • Title

    Automated I–V measurement system for CMOS SOI transistor test structures

  • Author

    Shvetsov-Shilovskiy, I.I. ; Nekrasov, P.V. ; Ulanova, A.V. ; Smolin, A.A. ; Sogoyan, A.V.

  • Author_Institution
    Nat. Res. Nucl. Univ. MEPhI, Moscow, Russia
  • fYear
    2015
  • fDate
    21-23 May 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The article discusses the creation of automated system for I-V measurements of CMOS SOI transistor test structures based on National Instruments PXI platform. The article describes the measurement system circuit diagram and its components. Article describes measurement process, user interface and resulting current-voltage characteristic example.
  • Keywords
    CMOS integrated circuits; computerised instrumentation; electric current measurement; integrated circuit testing; silicon-on-insulator; voltage measurement; CMOS SOI transistor test structures; National Instruments PXI platform; Si; automated I-V measurement system; current-voltage characteristic; measurement process; measurement system circuit diagram; user interface; CMOS integrated circuits; Current measurement; Nickel; Radiation effects; Time measurement; Transistors; Voltage measurement; CMOS SOI; PXI-4071; automated measurement system;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Control and Communications (SIBCON), 2015 International Siberian Conference on
  • Conference_Location
    Omsk
  • Print_ISBN
    978-1-4799-7102-2
  • Type

    conf

  • DOI
    10.1109/SIBCON.2015.7147282
  • Filename
    7147282
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=718778