Title :
Sensing ambient oxygen using a W/CuxO/Cu memristor
Author :
Chinwe Nyenke ; Lixin Dong
Author_Institution :
Dept. of Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI, USA
Abstract :
Three memristive devices were fabricated and investigated for sensing oxygen in ambient air. The device design was as follows: Deposition of copper (Cu) bottom electrodes, copper oxide (CuxO) switching layers, and W top electrodes in a crossbar array structure. The CuxO layer was deposited via reactive sputtering of a Cu target with Ar/O2 mixture. A portion of this layer was left exposed for sensing. Atomic composition was confirmed via energy-dispersive X-ray spectroscopy (EDS), and current-voltage characteristics were measured using a picoammeter. Results demonstrate an increase in resistance states (24-31% for low resistance states) upon prolonged exposure to ambient air.
Keywords :
X-ray chemical analysis; X-ray spectra; ammeters; copper; copper compounds; electrochemical electrodes; gas sensors; memristors; oxygen; sputter deposition; tungsten; EDS; O2; W-CuxO-Cu; atomic composition; bottom electrode; crossbar array structure; current-voltage characteristics; energy-dispersive Xray spectroscopy; memristor; oxygen sensing; picoammeter; reactive sputtering deposition; switching layer; top electrode; Copper; Electrodes; Memristors; Resistance; Sensors; Switches; Tungsten; Sensor; memristor; oxygen; passive sensing;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2015 IEEE 10th International Conference on
Conference_Location :
Xi´an
DOI :
10.1109/NEMS.2015.7147421
