Sensing ambient oxygen using a W/CuxO/Cu memristor

Author

Chinwe Nyenke ; Lixin Dong

Author_Institution

Dept. of Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI, USA

fYear

2015

fDate

7-11 April 2015

Firstpage

254

Lastpage

258

Abstract

Three memristive devices were fabricated and investigated for sensing oxygen in ambient air. The device design was as follows: Deposition of copper (Cu) bottom electrodes, copper oxide (Cu_xO) switching layers, and W top electrodes in a crossbar array structure. The Cu_xO layer was deposited via reactive sputtering of a Cu target with Ar/O₂ mixture. A portion of this layer was left exposed for sensing. Atomic composition was confirmed via energy-dispersive X-ray spectroscopy (EDS), and current-voltage characteristics were measured using a picoammeter. Results demonstrate an increase in resistance states (24-31% for low resistance states) upon prolonged exposure to ambient air.

Keywords

X-ray chemical analysis; X-ray spectra; ammeters; copper; copper compounds; electrochemical electrodes; gas sensors; memristors; oxygen; sputter deposition; tungsten; EDS; O₂; W-Cu_xO-Cu; atomic composition; bottom electrode; crossbar array structure; current-voltage characteristics; energy-dispersive Xray spectroscopy; memristor; oxygen sensing; picoammeter; reactive sputtering deposition; switching layer; top electrode; Copper; Electrodes; Memristors; Resistance; Sensors; Switches; Tungsten; Sensor; memristor; oxygen; passive sensing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2015 IEEE 10th International Conference on

Conference_Location

Xi´an

Type

conf

DOI

10.1109/NEMS.2015.7147421

Filename

7147421