• DocumentCode
    718923
  • Title

    Low temperature multi-layer wafer level package for chip scale atomic clock (CSAC)

  • Author

    Nannan Li ; Yangxi Zhang ; Ningli Zhu ; Yunhui Zhu ; Chengchen Gao ; Jing Chen

  • Author_Institution
    Nat. Key Lab. of Micro/Nano Fabrication Technol., Peking Univ., Beijing, China
  • fYear
    2015
  • fDate
    7-11 April 2015
  • Firstpage
    481
  • Lastpage
    484
  • Abstract
    This paper demonstrates a five layers wafer level packaging. This technology has been specially developed for chip scale atomic clock system package. It includes a sealed vapor cell and two supports for vertical-cavity surface-emitting lasers and photodetector. The sealed cavity is achieved by Glass-Silicon-Glass (G-S-G) anodic bonding with high hermeticity, high reliability and low bonding temperature (400°C). The triple structure is supported by two silicon wafers. It is realized by photosensitive BCB adhesive bonding with good uniformity, relatively high mechanical strength (8Mpa) and low bonding temperature (250°C). The results show that over 60% of wafer is bonded with no void on the joint area and well aligned. At last, the stacked wafer is diced into individual chips.
  • Keywords
    adhesive bonding; atomic clocks; chip scale packaging; elemental semiconductors; photodetectors; silicon; surface emitting lasers; wafer bonding; wafer level packaging; CSAC; G-S-G anodic bonding; Si; chip scale atomic clock system package; glass-silicon-glass anodic bonding; low temperature multilayer wafer level package; photodetector; photosensitive BCB adhesive bonding; sealed vapor cell; silicon wafers; temperature 250 degC; temperature 400 degC; vertical-cavity surface-emitting lasers; Atomic clocks; Bonding; Glass; Packaging; Silicon; Vertical cavity surface emitting lasers; BCB adhesive bonding; CSAC; anodic bonding; multi-layer bonding; wafer level package;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2015 IEEE 10th International Conference on
  • Conference_Location
    Xi´an
  • Type

    conf

  • DOI
    10.1109/NEMS.2015.7147472
  • Filename
    7147472