DocumentCode :
718925
Title :
Tentative bonding effect for maintaining alignment accuracy in bonding utilizing thick SU8 as an adhesive material
Author :
Kondo, Masahiro ; Miyashita, Hidetoshi ; Sang-Seok Lee ; Matsuoka, Nobuo
Author_Institution :
Grad. Sch. of Eng., Tottori Univ., Tottori, Japan
fYear :
2015
fDate :
7-11 April 2015
Firstpage :
487
Lastpage :
490
Abstract :
In this paper we have reported that a novel method to maintain alignment accuracy in wafer bonding process utilizing resin as an adhesive material. We have proposed tentatively localized bonding method with 1100 nm near infrared (NIR) irradiation that is transparent to Si wafers. With the aid of our localized tentative bonding process, we have achieved maintenance of alignment accuracy when the 100 μm thick SU8 was utilized as an adhesive resin material between Si wafers. Moreover, in this paper, we have also reported the development results of a tentative bonder, which has the function for alignment of wafers simultaneously.
Keywords :
adhesive bonding; elemental semiconductors; resins; silicon; wafer bonding; NIR irradiation; SU8; Si; adhesive material; alignment accuracy; localized bonding method; localized tentative bonding process; near infrared irradiation; resin; size 100 mum; tentative bonder; wafer bonding process; wavelength 1100 nm; Accuracy; Bonding; Radiation effects; Resins; Silicon; Wafer bonding; SU8; alingment accuracy; near infrared; packaging; tentative bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2015 IEEE 10th International Conference on
Conference_Location :
Xi´an
Type :
conf
DOI :
10.1109/NEMS.2015.7147474
Filename :
7147474
Link To Document :
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