Title :
Design and fabrication of an in-plane SOI MEMS accelerometer with a high yield rate
Author :
Pengcheng Li ; Xiaoying Li ; Enfu Li ; Qiang Shen ; Honglong Chang
Author_Institution :
Northwestern Polytech. Univ., Xi´an, China
Abstract :
This paper presents a SOI based capacitive accelerometer using a backside dry release process. In order to increase the yield rate of the backside dry release process, the deep reactive ion etching (DRIE) process was improved by using a grooved accompany sheet. Using this method, the yield rate of the accelerometer was improved to 64.2% from19.2%. Test results show that sensitivity of the accelerometer is 3.5V/g.
Keywords :
accelerometers; microsensors; silicon-on-insulator; sputter etching; DRIE process; SOI based capacitive accelerometer; backside dry release process; deep reactive ion etching process; grooved accompany sheet; in-plane SOI MEMS accelerometer; Accelerometers; Capacitors; Fabrication; Micromechanical devices; Noise; Sensitivity; Sensors; SOI; micro-accelerometer; yield rate;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2015 IEEE 10th International Conference on
Conference_Location :
Xi´an
DOI :
10.1109/NEMS.2015.7147480
