Title :
A 16-Level-Cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET
Author :
Matsuzaki, Takanori ; Onuki, Tatsuya ; Nagatsuka, Shuhei ; Inoue, Hiroki ; Ishizu, Takahiko ; Ieda, Yoshinori ; Yamade, Naoto ; Miyairi, Hidekazu ; Sakakura, Masayuki ; Shionoiri, Yutaka ; Kato, Kiyoshi ; Okuda, Takashi ; Koyama, Jun ; Yamamoto, Yoshitaka
Author_Institution :
Semicond. Energy Lab. Co., Ltd., Atsugi, Japan
Abstract :
A 16-level cell is demonstrated using a test chip of nonvolatile oxide semiconductor RAM comprising c-axis aligned crystalline In-Ga-Zn oxide FETs. A read circuit composed of voltage followers outputs a read voltage with a maximum distribution of 37 mV. A single voltage follower has a maximum distribution of the read voltage of 25.3 mV. A 200 ns write time of the test chip is demonstrated.
Keywords :
CMOS memory circuits; field effect transistor circuits; indium compounds; operational amplifiers; random-access storage; semiconductor storage; 16-level-cell nonvolatile memory; In-Ga-Zn; crystalline oxide FET; nonvolatile oxide semiconductor RAM; read circuit; time 200 ns; voltage 25.3 mV; voltage 37 mV; voltage followers; Capacitors; Field effect transistors; Logic gates; Nonvolatile memory; Random access memory; Silicon; Voltage measurement;
Conference_Titel :
Memory Workshop (IMW), 2015 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6931-2
DOI :
10.1109/IMW.2015.7150266
