DocumentCode :
719521
Title :
A 55 nm Logic-Process-Compatible, Split-Gate Flash Memory Array Fully Demonstrated at Automotive Temperature with High Access Speed and Reliability
Author :
Do, Nhan ; Tee, Latt ; Hariharan, Santosh ; Lemke, Steven ; Tadayoni, Mandana ; Will Yang ; Mt Wu ; Jinho Kim ; Yueh-Hsin Chen ; Chien-Sheng Su ; Tiwari, Vipin ; Zhou, Stephen ; Qian, Rodger ; Yue, Ian
Author_Institution :
A Subsidiary of Microchip Technol. Inc., Silicon Storage Technol., Inc., San Jose, CA, USA
fYear :
2015
fDate :
17-20 May 2015
Firstpage :
1
Lastpage :
3
Abstract :
In this paper, a Flash macro designed with high-density arrays of split-gate (SG) SuperFlash® cells, compatibly embedded in a 55 nm Low Power (LP) logic process is demonstrated with full functionality and excellent reliability at automotive temperature range. This split-gate Flash memory technology can be seamlessly and universally embedded in multiple logic process platforms, and can continually be scaled to 40 nm and smaller lithographically nodes, without compromising performance and reliability.
Keywords :
automotive electronics; flash memories; integrated circuit design; integrated circuit reliability; integrated logic circuits; logic arrays; low-power electronics; LP logic process; SG SuperFlash cells; automotive temperature; high access speed; high-density arrays; lithographically nodes; logic-process-compatible split-gate flash memory array; low power logic process; multiple logic process platforms; reliability; size 40 nm; size 55 nm; Arrays; Automotive engineering; Logic gates; Nonvolatile memory; Reliability; Split gate flash memory cells; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2015 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6931-2
Type :
conf
DOI :
10.1109/IMW.2015.7150267
Filename :
7150267
Link To Document :
بازگشت