Title :
A Highly Reliable and Cost Effective 16nm Planar NAND Cell Technology
Author :
Kueber, William ; Puzzilli, Giuseppina ; Righetti, Niccolo ; Basco, Ricardo ; Lin Li ; Beltrami, Silvia ; Bertuccio, Massimo ; Camozzi, Elisa ; Daycock, David ; King, Matthew ; Larsen, Chris ; Karpan, Jeff ; Goda, Akira ; Roberts, Ceredig
Author_Institution :
R&D Process Integration Dept., Micron Technol. Inc., Boise, ID, USA
Abstract :
A 2D 16nm planar NAND cell technology is described with good cell to cell interference and reliability that can be used in a wide variety of applications. This second generation planar cell uses a high-K dielectric stack and a thin poly floating gate to maintain the needed gate coupling ratio and reduce adjacent cell interference. The technology includes select gates with the same planar structure as the cell. This select gate architecture simplifies the manufacturing of this NAND technology.
Keywords :
NAND circuits; integrated circuit reliability; integrated memory circuits; 2D planar NAND cell technology; cell to cell interference; high-K dielectric stack; poly floating gate; reliability; size 16 nm; Computer architecture; Flash memories; Interference; Logic gates; Microprocessors; Nonvolatile memory; Reliability;
Conference_Titel :
Memory Workshop (IMW), 2015 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6931-2
DOI :
10.1109/IMW.2015.7150269
