Title :
Comprehensive Methodology for ReRAM and Selector Design Guideline of Cross-point Array
Author :
Sangheon Lee ; Sooeun Lee ; Kibong Moon ; Jaehyuk Park ; Byungsub Kim ; Hyunsang Hwang
Author_Institution :
Dept. of Mater. Sci., POSTECH, Pohang, South Korea
Abstract :
In this research, an one selector-one ReRAM (1S1R) cross-point array of a multi-level cell (MLC) was demonstrated and investigated. To expand high-density feasibility of cross-point array, MLC pulse writing and reading operations were assessed with parasitic line resistances and capacitances using Matlab and HSPICE simulations. We observed a switching energy is an important parameter for MLC in actual cross-point array in the operating point of view. In addition, not only ReRAM but also selector characteristics are highly important in the device point of view. Therefore, this study serves power efficient guidelines for 1S1R devices and operating schemes of cross-point array.
Keywords :
resistive RAM; switching; cross point array; multilevel cell pulse writing; selector design guideline; selector-one ReRAM; switching energy; Arrays; Degradation; Fluctuations; Power demand; Switches; Writing;
Conference_Titel :
Memory Workshop (IMW), 2015 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6931-2
DOI :
10.1109/IMW.2015.7150280