Critical ReRAM Stack Parameters Controlling Complimentary versus Bipolar Resistive Switching

Author

Schonhals, Alexander ; Wouters, Dirk ; Marchewka, Astrid ; Breuer, Thomas ; Skaja, Katharina ; Rana, Vikas ; Menzel, Stephan ; Waser, Rainer

Author_Institution

Inst. fur Werkstoffe der Elektrotechnik II, RWTH Aachen Univ., Aachen, Germany

fYear

2015

fDate

17-20 May 2015

Firstpage

1

Lastpage

4

Abstract

The thickness of the oxygen scavenging metal layer, forming the Ohmic contact in HfOx and TaOx VCM-type Metal-Oxide ReRAM cells, was found to be the critical experimental parameter controlling stable bipolar resistive switching versus the occurrence of single-cell complimentary switching. It is argued that the physically controlling parameter is the effective work function (a)symmetry between top and bottom electrode contact of the ReRAM cell. For a thin metal cap layer, oxidation increases the effective work function changing from Ohmic to a more blocking contact behavior.

Keywords

hafnium compounds; resistive RAM; tantalum compounds; work function; HfO; TaO; bipolar resistive switching; critical ReRAM stack parameters; metal-oxide ReRAM cells; ohmic contact; oxygen scavenging metal layer; single-cell complimentary switching; thin metal cap layer; work function; Electrodes; Films; Hafnium compounds; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2015 IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4673-6931-2

Type

conf

DOI

10.1109/IMW.2015.7150281

Filename

7150281