Title :
In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory
Author :
Ji, B.L. ; Li, H. ; Ye, Q. ; Gausepohl, S. ; Deora, S. ; Veksler, D. ; Vivekanand, S. ; Chong, H. ; Stamper, H. ; Burroughs, T. ; Johnson, C. ; Smalley, M. ; Bennett, S. ; Kaushik, V. ; Piccirillo, J. ; Rodgers, M. ; Passaro, M. ; Liehr, M.
Author_Institution :
Coll. of Nanoscale Sci. & Eng., SUNY Polytech. Inst., Albany, NY, USA
Abstract :
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is developed to derive BERs as functions of the design margin, to provide guidance for technology evaluation and product design. The proposed BER calculation can also be used in the off-line bench test and build-in-self-test (BIST) for adaptive error correction and for the other types of random access memories.
Keywords :
built-in self test; error statistics; hafnium compounds; logic testing; resistive RAM; BIST; HfOx; RRAM; adaptive error correction; bit-error-rate; build-in-self-test; electrical in-line-test cycle data; resistive random access memory; spatial variability; temporal variability; write cycle resistance statistics; Bit error rate; Current measurement; Electrical resistance measurement; Hafnium compounds; Manufacturing; Semiconductor device measurement; Tin;
Conference_Titel :
Memory Workshop (IMW), 2015 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6931-2
DOI :
10.1109/IMW.2015.7150290
