Title :
Modeling of Atomic Migration Phenomena in Phase Change Memory Devices
Author :
Crespi, Luca ; Lacaita, Andrea ; Boniardi, Mattia ; Varesi, Enrico ; Ghetti, Andrea ; Redaelli, Andrea ; D´Arrigo, Giuseppe
Author_Institution :
Dipt. di Elettron., Politec. di Milano, Milan, Italy
Abstract :
Atomic migration on Phase Change Memory devices with wall architecture has been experimentally investigated and a quantitative model including electrical, thermal, and mechanical driving forces has been developed. The experimental results collected by driving the device with programming pulses with direct and reverse polarity have been accounted for. Comparison with data of atomic migration on heavily cycled cells is also provided.
Keywords :
integrated circuit modelling; phase change memories; atomic migration phenomena modeling; direct polarity; electrical driving forces; heavily cycled cells; mechanical driving forces; phase change memory devices; programming pulses; quantitative model; reverse polarity; thermal driving forces; wall architecture; Heating; Mathematical model; Phase change materials; Phase change memory; Programming; Solids; Stress;
Conference_Titel :
Memory Workshop (IMW), 2015 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6931-2
DOI :
10.1109/IMW.2015.7150296
