Title :
A novel fractal inductor for RF applications
Author :
Kumar, P. Akhendra ; Rao, N. Bheema
Author_Institution :
Dept. of ECE, NIT, Warangal, India
Abstract :
In this paper, a novel fractal inductor was presented. This inductor provides a high quality factor of 19.8 at a frequency of 9.1GHz with SRF of 47.1 GHz. The simulations are carried out using Full wave High Frequency Structural Simulator (HFSS) for a single layered 0.18μm technology. The simulation results show an improvement in quality factor by 22% over conventional fractal inductor and results also shows an improvement in SRF by 21% over conventional fractal inductor.
Keywords :
fractals; inductors; microwave devices; RF applications; frequency 47.1 GHz; frequency 9.1 GHz; full wave high frequency structural simulator; high quality factor inductor; novel fractal inductor; self-resonant frequency; size 0.18 mum; Artificial neural networks; Conductors; Etching; Fractals; Inductors; Integrated circuits; Quality factor (Q); Self Resonant Frequency (SRF);
Conference_Titel :
Industrial Instrumentation and Control (ICIC), 2015 International Conference on
Conference_Location :
Pune
DOI :
10.1109/IIC.2015.7150862
