Species selection of pre-amorphous implantation in Nickle Silicide process

For 40nm technology node, the Nickel Silicide process is widely used due to advantages such as low silicon consumption and low stress. In the meantime, a pre-amorphous implantation is necessary for Nickel Silicide formation to eliminate dislocations which could easily cause piping defects, and to improve interface roughness which may induce spike defects. This paper studies a variety of species used for pre-amorphous implantation, and presents some experiments to indicate the best implant condition among Germanium, Carbon and Silicon species. Implant temperature is an important factor which will be discussed specifically. Leakage performance at room temperature and cold temperature implantation are compared by VC (Voltage Contrast) measurement data. Besides, Energy and Dose effect are also studied in this paper.