Enlarge the process window of patterns in 22nm node by using mask topography aware OPC and SMO

Author

Yansong Liu ; Xiaojing Su ; Lisong Dong ; Zhiyang Song ; Moran Guo ; Yajuan Su ; Yayi Wei ; Fengliang Liu ; Shengrui Zhang ; Lile Lu ; Weijie Shi ; Junwei Lu

Author_Institution

Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

4

Abstract

The mask three dimensional (M3D) effect of thin Opaque MoSi on Glass (OMOG) mask is analyzed by investigating the difference of diffraction orders between rigorous electro-magnetic field (EMF) simulation and thin mask approximation. Then the potential of extending the process window of AttPSM and OMOG masks with 22nm node SRAM cell patterns by using Optical Proximity Correction (OPC) and Source Mask Optimization (SMO) is compared. Both the OMOG and AttPSM masks are simulated and discussed. For this case, the results show that the overlapped process window (PW) greatly reduces without considering the M3D effects in OPC. In addition, M3D aware SMO improves the total process window one step further.

Keywords

SRAM chips; electromagnetic fields; masks; molybdenum alloys; optimisation; proximity effect (lithography); silicon alloys; AttPSM masks; EMF; MoSi; OMOG mask; OPC; SMO; SRAM cell patterns; diffraction orders; electro-magnetic field; mask three dimensional effect; mask topography; opaque MoSi on glass; optical proximity correction; overlapped process window; size 22 nm; source mask optimization; thin mask approximation; Micromechanical devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153352

Filename

7153352