Title :
Study of the ADR rinse effect on special residual type defect
Author :
Bin Xing ; Jing´an Hao ; Guogui Deng ; Qiang Wu
Author_Institution :
Technol. R&D, Semicond. Manuf. Int. Corp., Shanghai, China
Abstract :
In this paper, we study the formation mechanisms of two kinds of residual type defects and present an effective method, the "advanced defect reduction (ADR)" method, to remove them.
Keywords :
crystal defects; semiconductor device reliability; semiconductor technology; ADR rinse effect; advanced defect reduction method; semiconductor technology; special residual type defect;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153368
