• DocumentCode
    720797
  • Title

    APF hard mask distortion improvement for high aspect ratio patterning

  • Author

    Yu Bing-Lung ; YuKai Huang ; Shing-Ann Luo ; Yi-Sheng Cheng ; Yung-Tai Hung ; Tuung Luoh ; Lin-Wuu Yang ; Tahone Yang ; Kuang-Chao Chen

  • Author_Institution
    Technol. Dev. Center, Macronix Int. Co., Ltd., Hsinchu, Taiwan
  • fYear
    2015
  • fDate
    15-16 March 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The goal of this research is to improve bending issue and etch durability of amorphous carbon hard mask film (APF). The design of experiments (DoE) employed variable conditions of the spacing, RF power, precursors flow (C3H6 or C2H2) and temperature. High Young´s modulus and high sp3/sp2 bonding ratio can increase the etching resistance, and strengthen the high aspect ratio patterning structures.
  • Keywords
    bending; design of experiments; etching; masks; semiconductor device manufacture; APF hard mask distortion; amorphous carbon hard mask film; bending issue; design of experiments; etch durability; etching resistance; high aspect ratio patterning; Bonding; Irrigation; Radio frequency; Standards; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Technology International Conference (CSTIC), 2015 China
  • Conference_Location
    Shanghai
  • ISSN
    2158-2297
  • Type

    conf

  • DOI
    10.1109/CSTIC.2015.7153394
  • Filename
    7153394
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=720797