DocumentCode :
720806
Title :
Surface modification of hydrogenated amorphous carbon (a-C: H) films prepared by plasma enhanced chemical vapor deposition (PECVD)
Author :
Lihong Xiao ; Zhou, Eric ; Huanxi Liu
Author_Institution :
Semicond. Manuf. Int. Corp., Shanghai, China
fYear :
2015
fDate :
15-16 March 2015
Firstpage :
1
Lastpage :
3
Abstract :
Methods to modify the film surface of hydrogenated amorphous carbon (a-C: H) produced by PECVD have been studied. One way is to expose the film to O2-H2 plasma atmosphere, the topographical nature of the resulting surface can be modified substantially due to reaction of O2-H2 plasma with active ions and radicals, and therefore ashed carbon away with thickness decrease. The other way is to immerse films into O3-diluted deionized (DI) water. Free radicals produced at the surface during the PECVD process were quenched by reaction with oxygen and/or water and an oxidized hydrophilic layer was formed at the surface. Therefore, the film thickness, either optically measured by KLA tools or physically demonstrated with TEM images, has proven to be increased, different from that of dry physical etching.
Keywords :
amorphous state; carbon; etching; free radical reactions; hydrogenation; hydrophilicity; plasma CVD; quenching (thermal); thin films; transmission electron microscopy; C; O2-H2 plasma atmosphere; O3-diluted deionized water; PECVD; TEM images; dry physical etching; film surface; film thickness; free radicals; hydrogenated amorphous carbon film preparation; oxidized hydrophilic layer; plasma enhanced chemical vapor deposition; surface modification; topographical nature; Carbon; Optical films; Optical imaging; Plasmas; Surface topography; Surface treatment; Amorphous carbon; O3 etch; Oxidation; PECVD;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
ISSN :
2158-2297
Type :
conf
DOI :
10.1109/CSTIC.2015.7153411
Filename :
7153411
Link To Document :
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