DocumentCode
720807
Title
Uniformity improvement of a-C: H films prepared by PECVD
Author
Lihong Xiao ; Yan Yan ; Siyuan Yang
Author_Institution
Semicond. Manuf. Int. Corp. (SMIC), Shanghai, China
fYear
2015
fDate
15-16 March 2015
Firstpage
1
Lastpage
3
Abstract
Being used as an advanced patterning film, hydrogenated amorphous carbon (a-C: H) is prepared in a wide range of PECVD process parameters like showerhead-to-heater spacing, process pressure, radio frequency, deposition time, and so on. We investigated the deposition non-uniformity (NU%), in-film thickness variation, optical refractive index and extinction coefficient. A multi-variable statistical design of experiment (DOE) was performed to tune key process parameters in a scientific way in order to improve uniformity and reduce thickness variation with significant cost reduction. A reduction of NU% from 1.37 to 0.89% and thickness variation from 108.69 to 70.55 Å has been achieved, which was demonstrated by both DOE estimates and experiments. Both have proven the strongest effects of process pressure on film uniformity properties.
Keywords
carbon; design of experiments; extinction coefficients; hydrogen; plasma CVD; refractive index; thin films; C:H; DOE estimates; PECVD; extinction coefficient; hydrogenated amorphous carbon film; multivariable statistical design of experiment; optical refractive index; Analytical models; Carbon; Mass production; Optical films; Plasmas; Advanced Patterning; Hydrogenated amorphous carbon; PECVD; Uniformity;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location
Shanghai
ISSN
2158-2297
Type
conf
DOI
10.1109/CSTIC.2015.7153412
Filename
7153412
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