Study of grain size and polishing performance of aluminum film as metal gate electrode

Author

Xiaoniu Fu ; Xiaona Wang ; Jianhua Xu ; Wufeng Deng ; Ziying Zhang ; Xuezhen Jing ; Beichao Zhang

Author_Institution

Semicond. Manuf. Int. Corp. (SMIC), Shanghai, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

2

Abstract

Aluminum (Al) film has been implemented in semiconductor manufacturing such as gap fill in the metal gate trench. Al-induced crystallization and layer exchange processes showed great impact on grain size, and Al grain size was varied by deposition rate and temperature. We investigated grain size of Al deposited on different substrates of p-Si, PEOX and thermal oxide by DC magnetron sputtering. Grain size and film roughness were characterized by SEM and AFM. The film polishing result was correlative with grain size, smoothness and continuous Al film showed better CMP performance, while larger grain size was easier to be pulled out by CMP.

Keywords

aluminium; atomic force microscopy; chemical mechanical polishing; grain size; metallic thin films; scanning electron microscopy; sputter deposition; surface roughness; AFM; Al; CMP performance; DC magnetron sputtering; SEM; Si; SiO₂; aluminum film; chemical mechanical polishing; film roughness; grain size; metal gate electrode; plasma enhanced silicon oxide substrate; thermal oxide substrate; Aluminum; Artificial intelligence; Electrodes; Films; Logic gates; Magnetic resonance imaging; Substrates; Al grain size; CMP; different substrate;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153416

Filename

7153416