Improvement on switching uniformity of HFOx-based RRAM device fabricated by CMP

Author

Feng Yulin ; Zhang Kailiang ; Wang Fang ; Yuan Yujie ; Han Yemei ; Cao Rongrong ; Su Shuai

Author_Institution

Tianjin Key Lab. of Film Electron. & Commun. Devices, Tianjin Univ. of Technol., Tianjin, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

3

Abstract

The hafnium oxide (HfO_x)-based Resistive Random Access Memory (RRAM) array devices are fabricated by chemical mechanical planarization (CMP) process, which is based on the optimization of slurry and exploration on mechanism of HfO_x-CMP. The performance of switching properties post-polishing is investigated from device to device (WIW) as well as compared with those without planarization. The results indicate that the switching uniformity and the dispersion of operational voltages were improved after a two-step planarization, and the mechanism has also been explored.

Keywords

chemical mechanical polishing; hafnium compounds; optimisation; planarisation; resistive RAM; slurries; CMP; HfO_x; chemical mechanical planarization; hafnium oxide-based RRAM device; resistive random access memory; slurry optimization; switching properties post-polishing; switching uniformity; two-step planarization; Chemicals; Dielectrics; Dispersion; Fabrication; Hafnium compounds; Optical switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153417

Filename

7153417