DocumentCode
720824
Title
Stress control on plasma resistant ceramic coating
Author
Li Zhang ; Xingjian Chen ; Guofeng Yao ; Bing Xu ; Su, Carl ; Xiaoming He
Author_Institution
Adv. Micro-Fabrication Equip. Inc., Shanghai, China
fYear
2015
fDate
15-16 March 2015
Firstpage
1
Lastpage
3
Abstract
Chamber components inside plasma etching tools suffer the erosion of halogen plasma. Advanced ceramics, such as Al2O3, Y2O3 and etc., are often used as plasma resistant materials. In this study, 2um high density ceramic coating was prepared on Si by the plasma deposition. The influence of four parameters on the structure stability was systematically studied and a 300MPa of stress variation window was identified by orthogonal tests. The results from the experiments can be used to develop the structure stabilized ceramic coating for plasma etch chambers.
Keywords
ceramics; coating techniques; elemental semiconductors; halogens; plasma deposition; plasma transport processes; silicon; sputter etching; stress control; Si; advanced ceramic; halogen plasma erosion; plasma deposition; plasma etching; plasma resistant ceramic coating; plasma resistant material; pressure 300 MPa; stress control; stress variation window; Atomic layer deposition; Elementary particle vacuum; Ions; Plasmas; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location
Shanghai
ISSN
2158-2297
Type
conf
DOI
10.1109/CSTIC.2015.7153431
Filename
7153431
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