• DocumentCode
    720824
  • Title

    Stress control on plasma resistant ceramic coating

  • Author

    Li Zhang ; Xingjian Chen ; Guofeng Yao ; Bing Xu ; Su, Carl ; Xiaoming He

  • Author_Institution
    Adv. Micro-Fabrication Equip. Inc., Shanghai, China
  • fYear
    2015
  • fDate
    15-16 March 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Chamber components inside plasma etching tools suffer the erosion of halogen plasma. Advanced ceramics, such as Al2O3, Y2O3 and etc., are often used as plasma resistant materials. In this study, 2um high density ceramic coating was prepared on Si by the plasma deposition. The influence of four parameters on the structure stability was systematically studied and a 300MPa of stress variation window was identified by orthogonal tests. The results from the experiments can be used to develop the structure stabilized ceramic coating for plasma etch chambers.
  • Keywords
    ceramics; coating techniques; elemental semiconductors; halogens; plasma deposition; plasma transport processes; silicon; sputter etching; stress control; Si; advanced ceramic; halogen plasma erosion; plasma deposition; plasma etching; plasma resistant ceramic coating; plasma resistant material; pressure 300 MPa; stress control; stress variation window; Atomic layer deposition; Elementary particle vacuum; Ions; Plasmas; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Technology International Conference (CSTIC), 2015 China
  • Conference_Location
    Shanghai
  • ISSN
    2158-2297
  • Type

    conf

  • DOI
    10.1109/CSTIC.2015.7153431
  • Filename
    7153431