DocumentCode :
720824
Title :
Stress control on plasma resistant ceramic coating
Author :
Li Zhang ; Xingjian Chen ; Guofeng Yao ; Bing Xu ; Su, Carl ; Xiaoming He
Author_Institution :
Adv. Micro-Fabrication Equip. Inc., Shanghai, China
fYear :
2015
fDate :
15-16 March 2015
Firstpage :
1
Lastpage :
3
Abstract :
Chamber components inside plasma etching tools suffer the erosion of halogen plasma. Advanced ceramics, such as Al2O3, Y2O3 and etc., are often used as plasma resistant materials. In this study, 2um high density ceramic coating was prepared on Si by the plasma deposition. The influence of four parameters on the structure stability was systematically studied and a 300MPa of stress variation window was identified by orthogonal tests. The results from the experiments can be used to develop the structure stabilized ceramic coating for plasma etch chambers.
Keywords :
ceramics; coating techniques; elemental semiconductors; halogens; plasma deposition; plasma transport processes; silicon; sputter etching; stress control; Si; advanced ceramic; halogen plasma erosion; plasma deposition; plasma etching; plasma resistant ceramic coating; plasma resistant material; pressure 300 MPa; stress control; stress variation window; Atomic layer deposition; Elementary particle vacuum; Ions; Plasmas; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
ISSN :
2158-2297
Type :
conf
DOI :
10.1109/CSTIC.2015.7153431
Filename :
7153431
Link To Document :
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