TSV fabrication for image sensor packaging

Author

Wang Ping ; Wang Bangxu ; Jun, L.V. ; Huang, Mark ; Lai, Carl

Author_Institution

Suzhou Speed Semicond. Technol. Co. Ltd., Suzhou, China

fYear

2015

fDate

15-16 March 2015

Firstpage

1

Lastpage

4

Abstract

In this paper, we report a novel TSV fabrication method to develop CMOS image sensor package. The major processes comprise cavity wall formation, glass carrier to IC wafer bonding, grinding, TSV fabrication, passivation, laser drilling to expose the Al bondpads, PVD deposition, electroplating, re-distribution layer (RDL), under bump metallization and solder bump formation. The as-formed TSV CIS structure is solid and reliable in mass production.

Keywords

CMOS image sensors; aluminium; electroplating; grinding; integrated circuit metallisation; integrated circuit packaging; passivation; solders; three-dimensional integrated circuits; wafer bonding; Al; Al bondpads; CMOS image sensor package; PVD deposition; TSV fabrication; TSV passivation; bump metallization; cavity wall formation; electroplating; glass carrier; integrated circuit wafer bonding; integrated circuit wafer grinding; laser drilling; re-distribution layer; solder bump formation; Glass; Image sensors; Packaging; Semiconductor device reliability; Silicon; Stress; CMOS Imager Sensor; PVD; Plating; Redistribution Layer; Through silicon via;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

Conference_Location

Shanghai

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153436

Filename

7153436