• DocumentCode
    720840
  • Title

    OCD measurement of defocus and dose in EUV lithography

  • Author

    Chen Huiping ; Gao Fu ; Huang Kun ; Zhang Zhensheng ; Shi Yaoming ; Xu Yiping

  • Author_Institution
    Raintree Sci. Instrum. (Shanghai) Corp., Shanghai, China
  • fYear
    2015
  • fDate
    15-16 March 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Critical dimension (CD) and geometry shape of the gratings play a key role in extreme ultraviolet (EUV) lithography to ensure the device performance. It is important to control the dose/defocus in the EUV photolithography under proper status to make sure the CD and shape meeting the fine and strict requirements. Through the OCD measurement, we build a relationship between the CD/shape and dose/defocus through a Focus-Exposure-Matrix (FEM) wafer, and eventually can measure the dose/defocus in a product wafer.
  • Keywords
    semiconductor technology; ultraviolet lithography; EUV lithography; OCD measurement; critical dimension; extreme ultraviolet lithography; focus-exposure-matrix wafer; geometry shape; Nickel;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Technology International Conference (CSTIC), 2015 China
  • Conference_Location
    Shanghai
  • ISSN
    2158-2297
  • Type

    conf

  • DOI
    10.1109/CSTIC.2015.7153452
  • Filename
    7153452
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=720840