Title :
Stress measurements on TSVs and BEoL structures with high spatial resolution
Author :
Vogel, Dietmar ; Auerswald, Ellen ; Auersperg, Juergen ; Rzepka, Sven
Author_Institution :
Micro Mater. Center, Fraunhofer ENAS, Chemnitz, Germany
Abstract :
Knowledge and control of local stress development in BEoL stacks and nearby TSVs in advanced 3D integrated devices is a key to their thermo-mechanical reliability. The paper presents a combined simulation / measurement approach to evaluate stresses generated in the result of the TSV and BEoL stack manufacturing and 3D bonding processes. Stress measurement methods of high spatial resolution capability are briefly benchmarked. The application of microRaman and the new FIB based stress release techniques on TSV structures are demonstrated in some detail.
Keywords :
bonding processes; focused ion beam technology; integrated circuit reliability; stress measurement; three-dimensional integrated circuits; 3D bonding process; 3D integrated devices; BEoL stacks; BEoL structures; FIB based stress release; TSV structures; high spatial resolution; local stress development; microRaman application; stack manufacturing; stress measurements; thermomechanical reliability; Analytical models; Lattices; Silicon; Spatial resolution; Stress; Stress measurement; Through-silicon vias;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
DOI :
10.1109/CSTIC.2015.7153465
