DocumentCode :
720864
Title :
Iron contamination and reusability of seed crystal for quasi-single crystalline silicon ingots for solar cells
Author :
Zaoyang Li ; Lijun Liu ; Xiaofang Qi ; Genxiang Zhong ; Genshu Zhou
Author_Institution :
Sch. of Energy & Power Eng., Xi´an Jiaotong Univ., Xi´an, China
fYear :
2015
fDate :
15-16 March 2015
Firstpage :
1
Lastpage :
3
Abstract :
The seed crystal is easily contaminated by iron impurity during the directional solidification (DS) process for manufacturing quasi-single crystalline (QSC) silicon ingot, and thus influences its reusability. We investigate the transport and distribution characteristics of iron impurity in DS processes based on different seed preservation time, and reveal the iron contamination level in seed crystal. Additionally, the heights of the bottom iron contaminated region are compared for silicon ingots grown from normal and recycled seed crystals to find out the reusability of the recycled seed crystal. The results show that the total iron concentration in the seed crystal after full solidification is between 1014 and 1015 atoms/cm3. The recycled seed crystal can be reused for DS processes with long preservation, whereas it is not recommended for reusing for processes with short preservation.
Keywords :
crystallisation; impurities; ingots; optoelectronic devices; semiconductor device manufacture; solar cells; solidification; DS process; directional solidification process; distribution characteristics; full solidification; iron impurity contamination; quasi-single crystalline silicon ingot manufacturing; recycled seed crystal reusability; seed preservation time; solar cells; total iron concentration; transport characteristics; Contamination; Crystals; Impurities; Iron; Photovoltaic cells; Silicon; Standards;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
Conference_Location :
Shanghai
ISSN :
2158-2297
Type :
conf
DOI :
10.1109/CSTIC.2015.7153492
Filename :
7153492
Link To Document :
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