Development of ito/layered a-P Si:H film stack for silicon heterojunction solar cells

This work focuses on the development of integrated front side film stack containing a-p Si:H film as the emitter and ITO film as the carrier collection layer in n-type silicon heterojunction (SHJ) solar cells. Doping concentration and thickness of a-p Si:H films, and O₂/Ar flow ratio of DC sputtered ITO films were varied to obtain optimal single layer properties. A combined ITO/double a-p Si:H stack was then developed and optimized to improve fill factor (FF) of SHJ solar cells. As a result, FF higher than 78% with conversion efficiency of 21.6% have been achieved in this work.