Title :
A novel architecture implementation in RF Amplifier using CMOS 180nm technology
Author :
Sandesh, Shanmukha ; Niranjan, S. ; Bhargav, Samanvitha B. ; Sneha, B. ; Vasundara Patel, K.S.
Author_Institution :
Dept. of Electron. & Commun., BMS Coll. of Eng., Bangalore, India
Abstract :
This paper presents a novel design of Very High Frequency RF Amplifier using 180nm CMOS technology. Role of silicon in the semiconductor industry and the necessity of low power RF circuits are discussed. The function of RF amplifier along with its applications and classes are explained. Existing designs of RF amplifiers are analyzed, implemented and simulated. A new architecture with better performance, which can operate at a Very High Frequency of 15.849GHz with meager power dissipation of 0.20mW and with considerable bandwidth of 1.8068GHz, is proposed, analyzed and simulated in Synopsys HSPICE to verify the architecture. Comparison between the existing designs of RF amplifiers and the proposed RF Amplifier is carried out with respect to operating frequency, power dissipation, Bandwidth, supply voltage and Gain which are the critical parameters of RF design.
Keywords :
CMOS integrated circuits; microwave amplifiers; radiofrequency integrated circuits; semiconductor industry; silicon; CMOS technology; RF amplifier; RF design; Synopsys HSPICE; architecture implementation; bandwidth 1.8068 GHz; complementary metal oxide semiconductor; frequency 15.849 GHz; low power RF circuit; operating frequency; power 0.20 mW; power dissipation; semiconductor industry; silicon; size 180 nm; Bandwidth; Gain; Noise; Noise figure; Power amplifiers; Radio frequency; Transistors; CMOS 180nm; Communication; RF Amplifier; SHF Amplifier; VHF; Wireless Circuit;
Conference_Titel :
Advance Computing Conference (IACC), 2015 IEEE International
Conference_Location :
Banglore
Print_ISBN :
978-1-4799-8046-8
DOI :
10.1109/IADCC.2015.7154890
