Title :
A multi-level cell for STT-MRAM realized by capping layer adjustment
Author :
Wang, M. ; Peng, S. ; Zhang, Y. ; Zhang, Y. ; Ravelosona, D. ; Zhao, W. ; Zhang, Q.
Author_Institution :
Spintronics Interdiscipl. Centre, Beihang Univ., Beijing, China
Abstract :
Spin transfer torque magnetic random access memory (STT-MRAM) is recommended as one of the promising candidates for nonvolatile memory technologies. Compared with traditional memory technologies, STT-MRAM demonstrates low power consumption, fast access speed and infinite endurance, while the storage capacity reported so far has not been that large in contrast with SRAM or DRAM. Considering this, multi-level cells (MLC) based on more than one magnetic tunnel junctions (MTJ) have been proposed to further enhance the memory density.
Keywords :
magnetic storage; magnetic tunnelling; random-access storage; STT-MRAM; capping layer adjustment; magnetic tunnel junction; memory density; multilevel cell; nonvolatile memory; spin transfer torque magnetic random access memory; Hafnium; Junctions; Magnetic tunneling; Perpendicular magnetic anisotropy; Random access memory; Switches;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7156499
