DocumentCode :
721420
Title :
Laser powered magnetic-random access memory
Author :
Xu, Y. ; Lin, W. ; Hehn, M. ; Lu, Y. ; Rinnert, H. ; Petit, S. ; Montaigne, F. ; Chaput, L. ; Negulescu, B. ; Andrieu, S. ; Mangin, S.
Author_Institution :
Inst. Jean Lamour, Vandoeuvre les Nancy, France
fYear :
2015
fDate :
11-15 May 2015
Firstpage :
1
Lastpage :
1
Abstract :
This study demonstrates the use of a light source to power a magnetic tunnel junction used in magnetic random access memory. The magnetic tunnel junction grown on silicon substrate is composed of Ta-Co-IrMn-Co-Al2O3-Co-Pt and activated using 800 nm laser wavelength.
Keywords :
MRAM devices; alumina; cobalt; iridium alloys; magnetic tunnelling; manganese alloys; platinum; tantalum; Si; Ta-Co-IrMn-Co-Al2O3-Co-Pt; laser powered magnetic-random access memory; light source; magnetic tunnel junction; silicon substrate; wavelength 800 nm; Junctions; Magnetic recording; Magnetic tunneling; Power lasers; Semiconductor lasers; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
Type :
conf
DOI :
10.1109/INTMAG.2015.7156501
Filename :
7156501
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=721420
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