Title :
Proposal and demonstration of a new spin-orbit torque induced switching device
Author :
Fukami, S. ; Anekawa, T. ; Zhang, C. ; Ohno, H.
Author_Institution :
Center for Spintronics Integrated Syst., Tohoku Univ., Sendai, Japan
Abstract :
A new structure of spin-orbit torque switching device is proposed and demonstrated in this study. The structure is composed of a stack of Ta/CoFeB/MgO/CoFeB/Co/Ru/Co deposited by dc/rf magnetron sputtering, electron beam lithography, and Ar ion milling. The magnetic tunnel junction with in-plane easy axis in the proposed device makes it easy to obtain large tunnel magnetoresistance ratio and small offset fields acting on the ferromagnetic recording layer. The magnetization switching induced by spin current whose polarization is orthogonal to the easy axis under a static field along another orthogonal direction is favorable for ultrafast magnetization switching.
Keywords :
boron alloys; cobalt; cobalt alloys; electron beam lithography; ferromagnetic materials; iron alloys; magnesium compounds; magnetic multilayers; magnetic recording; magnetic switching; magnetisation; magnetoelectronics; milling; ruthenium; spin polarised transport; spin-orbit interactions; sputter deposition; tantalum; tunnelling magnetoresistance; Ta-CoFeB-MgO-CoFeB-Co-Ru-Co; electron beam lithography; ferromagnetic recording layer; ion milling; magnetic tunnel junction; magnetron sputtering; offset fields; spin current; spin-orbit torque induced switching device; static field; tunnel magnetoresistance ratio; ultrafast magnetization switching; Integrated circuits; Magnetic fields; Magnetic tunneling; Magnetization; Switches; Torque; Tunneling magnetoresistance;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7156648
