Anisotropic ac magnetic susceptibility in (Ga, Mn)As film

Author

Li, X. ; Dong, S. ; Yoo, T. ; Liu, X. ; Dobrowolska, M. ; Furdyna, J.K.

Author_Institution

Dept. of Phys., Univ. of Notre Dame, Notre Dame, IN, USA

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

This paper presents dc magnetization and ac magnetic susceptibility measurements as a function of temperature and applied magnetic field in ferromagnetic semiconductor (Ga,Mn)As films grown by molecular beam epitaxy. Analysis of the hysteresis loops and of frequency-dependent ac susceptibility leads to the unambiguous conclusion that the ac susceptibility peak near T_C occurs because of transition from paramagnetic to ferromagnetic phase; and the peak near T_C/2 occurs because of the onset of a biaxial domain structure.

Keywords

III-V semiconductors; ferromagnetic materials; ferromagnetic-paramagnetic transitions; gallium arsenide; magnetic anisotropy; magnetic domains; magnetic epitaxial layers; magnetic hysteresis; magnetic semiconductors; magnetic susceptibility; manganese compounds; molecular beam epitaxial growth; paramagnetic materials; semiconductor epitaxial layers; semiconductor growth; GaMnAs; anisotropic ac magnetic susceptibility; applied magnetic field; biaxial domain structure; dc magnetization; ferromagnetic semiconductor films; frequency-dependent ac susceptibility; hysteresis loops; molecular beam epitaxy; paramagnetic-ferromagnetic phase transition; Films; Magnetic domains; Magnetic resonance; Magnetic separation; Magnetic susceptibility; Perpendicular magnetic anisotropy;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7156853

Filename

7156853