Title :
Resonance frequency of ferromagnetic thin film controlled by rectangle antidot arrays
Author :
Luo, X.J. ; Zhou, P. ; Wang, X. ; Zhang, N. ; Deng, L.
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
Fe66Co17B16Si1 amorphous thin films containing magnetic antidot lattices with rectangle antidot side were fabricated on silicon substrate by photolithography, DC magnetron sputtering, and lift-off patterning. The presence of antidots destroyed the pristine uniaxial anisotropy in continuous film and brought the multipeak resonant out in microwave permeability. With the increasing thickness of the film, the domain structure and magnetic moment configuration changed so that the peak value became gradually small and even disappear. These changes is attributed to the antidots not only changed the demagnetizing field in test but also in the sputtering deposition. Results also show that the coercive field was increased by the presence of antidots while the hysteresis loop depended more on the geometrical shape of the antidots.
Keywords :
amorphous magnetic materials; boron alloys; cobalt alloys; coercive force; demagnetisation; ferromagnetic materials; ferromagnetic resonance; iron alloys; magnetic anisotropy; magnetic domains; magnetic hysteresis; magnetic moments; magnetic permeability; magnetic thin films; metallic thin films; photolithography; quantum dots; silicon alloys; sputter deposition; DC magnetron sputtering; Fe66Co17B16Si; Si; amorphous thin films; coercive field; continuous film; demagnetizing field; domain structure; ferromagnetic thin film; hysteresis loop; lift-off patterning; magnetic antidot lattices; magnetic moment; microwave permeability; photolithography; pristine uniaxial anisotropy; rectangle antidot arrays; resonance frequency; silicon substrate; Anisotropic magnetoresistance; Films; Magnetic hysteresis; Magnetic resonance; Permeability; Sputtering;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7156926