Effect of Mn impurities on the 3-terminal Hanle signals in ferromagnet/oxide tunnel contacts on a semiconductor

Author

Spiesser, A.M. ; Saito, H. ; Yuasa, S. ; Jansen, R.

Author_Institution

Spintronics Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol. AIST, Tsukuba, Japan

fYear

2015

fDate

11-15 May 2015

Firstpage

1

Lastpage

1

Abstract

The origin of electrical spin signals observed in ferromagnet/insulator/semiconductor (FM/I/SC) junctions has been the subject of heated debates in recent years . Experimental data obtained by many research groups using the three-terminal configuration are orders of magnitude larger than predicted by the theory of spin injection, accumulation and diffusion. Nonetheless, the spin signals, which are obtained from Hanle measurements, show all the characteristic features of precession of an induced non-equilibrium spin population indicating that intriguing and yet unknown physics is at play.

Keywords

Hanle effect; diffusion; electrical contacts; ferromagnetic materials; impurities; spin polarised transport; tunnelling; 3-terminal Hanle signals; Hanle measurements; diffusion; electrical spin signals; ferromagnet-insulator-semiconductor junctions; ferromagnet-oxide tunnel contacts; impurity effect; nonequilibrium spin population; spin injection; spin signals; three-terminal configuration; Frequency modulation; Impurities; Ions; Junctions; Magnetic tunneling; Manganese;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference (INTERMAG), 2015 IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4799-7321-7

Type

conf

DOI

10.1109/INTMAG.2015.7157059

Filename

7157059