DocumentCode :
721907
Title :
Voltage-induced reversible and irreversible changes in the magnetic coercivity of Fe, Co/ZnO heterostructures
Author :
Chang, P. ; Hsu, C. ; Lin, W.
Author_Institution :
Dept. of Phys., Nat. Taiwan Normal Univ., Taipei, Taiwan
fYear :
2015
fDate :
11-15 May 2015
Firstpage :
1
Lastpage :
1
Abstract :
This study investigates the magnetic coercivity of heterostructures composed of a transition metal (Fe and Co) and a semiconductor (ZnO). An enhancement in the magnetic coercivity is observed which is due to direct current heating-induced oxidation at the interface. Depth-profiling X-ray photoemission spectroscopy observations confirm oxide formation at the interface due to annealing. It is shown that magnetic coercivity of heterostructures monotonically decreased as a relatively small voltage is applied and its reversibility is demonstrated by cyclically changing the bias voltage.
Keywords :
II-VI semiconductors; X-ray photoelectron spectra; annealing; cobalt; coercive force; interface magnetism; iron; oxidation; semiconductor-metal boundaries; wide band gap semiconductors; zinc compounds; Co-ZnO; Fe-ZnO; annealing; bias voltage; current heating-induced oxidation; depth-profiling X-ray photoemission spectroscopy; magnetic coercivity; oxide formation; transition metal-semiconductor heterostructures; Coercive force; II-VI semiconductor materials; Iron; Magnetic hysteresis; Magnetic semiconductors; Magnetic tunneling; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
Type :
conf
DOI :
10.1109/INTMAG.2015.7157165
Filename :
7157165
Link To Document :
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