Influence of ferromagnetic electrodes on the resistive switching device based on NiO

Metal-insulator transition (MIT) induced by the electric field has been intensively investigated owing to its potential for nano-sized resistance switching devices in the next generation as well as its simple device structure. To explore the correlation between the MIT and spin configuration, in the present study, we investigate the influence of the ferromagnetic electrode on the MIT. We have fabricated the MIT device consisting of CoFeB/NiOx/W multi-layered structure on SiO₂/Si substrate using magnetron sputtering. Here, Néel temperature of our NiO film was found to be around 250 K from the separately performed magneto-transport measurements. The switching property of the electrical conductance was evaluated from the I-V characteristic of vertical transport for the device, as schematically shown in Fig. 1. We investigated the temperature dependence of the switching voltage between the high-resistive and low resistive states. In addition, the correlation between the switching property and the magnetic orientation between the CoFeB electrode and NiOx layer was also investigated.