DocumentCode :
721914
Title :
Voltage-gated skyrmion transistor
Author :
Zhang, X. ; Ezawa, M. ; Zhao, G. ; Zhou, Y.
Author_Institution :
Dept. of Phys., Univ. of Hong Kong, Hong Kong, China
fYear :
2015
fDate :
11-15 May 2015
Firstpage :
1
Lastpage :
1
Abstract :
Magnetic chiral skyrmions are localized topological field configurations, which are stabilized by Dzyaloshinskii-Moriya interaction and/or magnetostatic dipolar coupling in magnetic nanostructures. To realize and eventually commercialize skymionics, various challenges need to be solved such as creating and annihilation of skyrmions, conversion of skyrmions with different helicity and vorticity, efficient transmission and read-out of skyrmions, etc. This work addressed the critical problem of voltage control of magnetic skyrmion, in which the perpendicular magnetic anisotropy (PMA) in the gate region is locally controlled by an applied electric field due to the charge accumulations. With the configuration of applying a gate voltage in the center region of a magnetic nanotrack, two prototypes of transistors have been investigated: skyrmion driven by spin current and skyrmion driven by spin wave.
Keywords :
magnetic devices; nanomagnetics; perpendicular magnetic anisotropy; skyrmions; spin waves; transistors; voltage control; Dzyaloshinskii-Moriya interaction; magnetic chiral skyrmions; magnetic nanostructures; magnetic nanotrack; magnetostatic dipolar coupling; perpendicular magnetic anisotropy; spin current driven skyrmion; spin wave driven skyrmion; voltage-gated skyrmion transistor; Electric fields; Magnetostatic waves; Magnetostatics; Perpendicular magnetic anisotropy; Transistors; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
Type :
conf
DOI :
10.1109/INTMAG.2015.7157173
Filename :
7157173
Link To Document :
بازگشت