• DocumentCode
    721981
  • Title

    Spin-orbitronics memory device with matching and self-reference functionality

  • Author

    Wang, X. ; Asnaashari, M. ; Keshtbod, P. ; Wang, Z. ; Satoh, K. ; Yen, B.K. ; Huai, Y.

  • Author_Institution
    Avalanche Technol., Fremont, CA, USA
  • fYear
    2015
  • fDate
    11-15 May 2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Spin-orbit interaction generated spin torque provides a new writing mechanism for spintronics memory devices. This presentation addresses a broad question of how to design spintronics memory devices for match-in-space, content addressable applications utilizing spin-orbit interaction generated spin torque combined with conventional spin torque generated by magnetization polarization . We propose new device and system solutions targeting different spintronics device technology development stages . Particularly we propose a new spin-orbitronics memory device that is capable of multi-bit match-in-space and single-bit nondestructive self-reference functionality.
  • Keywords
    DRAM chips; MRAM devices; magnetisation; magnetoelectronics; spin-orbit interactions; magnetization polarization; multibit match-in-space nondestructive self-reference functionality; single-bit nondestructive self-reference functionality; spin torque; spin-orbit interaction; spin-orbitronics memory device; spintronics memory devices; Computer aided manufacturing; Computer architecture; Magnetoelectronics; Microprocessors; Random access memory; Torque; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference (INTERMAG), 2015 IEEE
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-7321-7
  • Type

    conf

  • DOI
    10.1109/INTMAG.2015.7157257
  • Filename
    7157257