DocumentCode :
721981
Title :
Spin-orbitronics memory device with matching and self-reference functionality
Author :
Wang, X. ; Asnaashari, M. ; Keshtbod, P. ; Wang, Z. ; Satoh, K. ; Yen, B.K. ; Huai, Y.
Author_Institution :
Avalanche Technol., Fremont, CA, USA
fYear :
2015
fDate :
11-15 May 2015
Firstpage :
1
Lastpage :
1
Abstract :
Spin-orbit interaction generated spin torque provides a new writing mechanism for spintronics memory devices. This presentation addresses a broad question of how to design spintronics memory devices for match-in-space, content addressable applications utilizing spin-orbit interaction generated spin torque combined with conventional spin torque generated by magnetization polarization . We propose new device and system solutions targeting different spintronics device technology development stages . Particularly we propose a new spin-orbitronics memory device that is capable of multi-bit match-in-space and single-bit nondestructive self-reference functionality.
Keywords :
DRAM chips; MRAM devices; magnetisation; magnetoelectronics; spin-orbit interactions; magnetization polarization; multibit match-in-space nondestructive self-reference functionality; single-bit nondestructive self-reference functionality; spin torque; spin-orbit interaction; spin-orbitronics memory device; spintronics memory devices; Computer aided manufacturing; Computer architecture; Magnetoelectronics; Microprocessors; Random access memory; Torque; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
Type :
conf
DOI :
10.1109/INTMAG.2015.7157257
Filename :
7157257
Link To Document :
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